Lateral Self-Aligned p-Type In2O3 Nanowire Arrays Epitaxially Grown on Si Substrates

Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.

Lateral orientated growth of In2O3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In2O3 NWs and NRs were grown along [211] in parallel to the Si +/-[110] and lying in the substrate plane. The electrical measurements show that the In2O3 NWs are p-type semiconductor. By N+ do...

Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy.

The growth of self-catalyzed ternary core-shell GaAsP nanowire (NW) arrays on SiO2 patterned Si(111) substrates has been demonstrated by using solid-source molecular beam epitaxy. A high-temperature deoxidization step up to ∼ 900 °C prior to NW growth was used to remove the native oxide and/or SiO2 residue from the patterned holes. To initiate the growth of GaAsP NW arrays, the Ga predeposition...

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Smoothening of (001) and (111) Cu films epitaxially grown on Si substrates

We report an in-situ study of the MBE growth of Cu films on hydrogen-terminated Si (001) and (7x7) reconstructed Si(111) substrates. Using correlated RHEED and STM data, we find a dramatic smoothing of epitaxial Cu(001) surfaces by annealing the asgrown films in the 120-160C temperature range and somewhat less so for the Cu (111) films. Our measurements reveal a lower activation energy (0.40 + ...

Formation of Ultrahigh Density Quantum Dots Epitaxially Grown on Si Substrates Using Ultrathin SiO2 Film Technique

Development of Si-based light emitter has been eagerly anticipated in Si photonics. However, its realization is difficult because group IV semiconductors such as Si and Ge are indirect-transition semiconductors. Si or Ge quantum dots (QDs) on Si substrates have drawn much attention as Si-based light emitting materials because their optical transition probability can be enhanced by their quantum...